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| 2N7000 200mA,60V,RDS(ON) 6[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives. SEATING PLANE D TO-92 E S1 A b1 L Drain e1 e b C REF. Gate Source A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage -Continuous -Non-Repetitive (tp Drain Current -Continuous -Pulsed Power Dissipation - TA=25 C o 50us) Symbol VDS VGS VGSM ID IDM PD RJA Tj, Tstg TL Ratings 60 20 40 200 500 0.35 2.8 357 -55~+150 300 Unit V V V mA mA W mW/ oC o -Derate Above 25 C Thermal Resistance, Junction-To-Ambient Operating Junction and Storage Temperature Range Max. Lead Temperature For Soldering Purposes, 1/16" From Case For 10 Seconds o C/W o C C o http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2N7000 200mA,60V,RDS(ON) 6[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source On-Resistance o Symbol BVDSS VGS(th) IGSS IDSS ID(ON) RDS(ON) Min. 60 0.8 _ _ Typ. _ _ _ _ _ _ _ _ _ _ _ _ Max. _ Unit V V nA uA mA Test Condition VGS=0V, ID=250uA VDS=VGS, ID=1.0mA VGS=15V,VDS=0 VDS=48V,VGS=0 VDS=10V ,VGS=4.5V VGS=10V, ID=500mA VGS=4.5V,ID=75mA VGS=10V, ID=500mA VGS=4.5V,ID=75mA VGS=0V VDS=25V f=1.0MHz 3.0 10 1 _ 75 _ _ _ 5 6 2.5 [ Drain-Source On-Voltage VDS(ON) _ _ _ _ V 0.45 60 Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance Ciss Coss Crss Gfs 1 25 5 _ pF 100 _ mS VDS=10V,ID=200mA Switching Characteristics Parameter Turn-on Delay Time Turn-off Delay Time Symbol TON TOFF Min. _ _ Typ. _ _ Max. 10 10 Unit nS Test Condition VDD=15V,ID=500mA RG=25 [ RL=30 [ VGEN=10V Notes: 1. Pulse widthO 300us, dutycycleO2%. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2N7000 200mA,60V,RDS(ON) 6[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3 |
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